Stress sensors based on magnetostrictive thin films

Magnetostrictive thin films for microwave spintronics

Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degra...

Stress Considerations in Thin Films for CMOS-Integrated Gas Sensors

The integration of gas sensing elements into hand-held electronics will provide individuals the ability to detect harmful chemicals and pollutants in the environment in real time. Metal oxide gas sensors rely on changes in their electrical conductance due to the interaction of the oxide with a surrounding gas at an elevated temperature. The intrinsic stress in the metal oxide films during the l...

Magnetostrictive stress reconfigurable thin film resonators for near direct current magnetoelectric sensors

Magnetostrictive Delay Line Thin Films as Sensing Elements

A miniaturized arrangement based on magnetostrictive delay line (MDL) mechanism, able to be used as sensor, is realized using thin films technology. In order to obtain high-performance miniaturized magnetostrictive delay line arrangement we used Fe, Ni and Fe70B20Si6C4 amorphous thin films as magnetostrictive sensing element because of their better magnetic and magnetoelastic characteristics th...

Residual Stress Variation in Polysilicon Thin Films

This paper compares the use of four mechanical methods for characterization of residual stress variation in low pressure chemical vapor deposited (LPCVD) polysilicon thin films deposited, doped, and annealed under different conditions. Stress was determined using buckling structures, vibrating microstructures, static rotating structures and the wafer curvature method. After deposition of 1.0 μm...